DocumentCode :
864041
Title :
Dielectrophoretic integration of nanodevices with CMOS VLSI circuitry
Author :
Narayanan, Arvind ; Dan, Yaping ; Deshpande, Vinayak ; Di Lello, Nicole ; Evoy, Stephane ; Raman, Sanjay
Author_Institution :
Metalink Broadband, Norcross, GA
Volume :
5
Issue :
2
fYear :
2006
fDate :
3/1/2006 12:00:00 AM
Firstpage :
101
Lastpage :
109
Abstract :
We present a novel platform for the development and deployment of nanosensors in integrated systems. The nanosensor technology is based on cylindrical structures grown using porous membranes as templates. These nanostructures are manipulated using dielectrophoretic forces, thus allowing their individual assembly and characterization. This assembly also enables the development of "mixed-mode" integrated circuits that include readout, signal processing, and communications circuitry, as well as the requisite layout for the post-integrated-circuit assembly of the nanostructures. We report the results of assembly experiments performed on complementary metal-oxide-semiconductor (CMOS) circuitry designed using Freescale semiconductor\´s HiP6W low-voltage 0.18-mum Si/SiGe BiCMOS process
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; VLSI; electrophoresis; elemental semiconductors; integrated circuit design; nanotechnology; semiconductor materials; sensors; silicon; BiCMOS process; CMOS VLSI circuitry; Si-SiGe; communications circuitry; complementary metal-oxide-semiconductor circuitry design; cylindrical structures; dielectrophoretic forces; dielectrophoretic integration; mixed-mode integrated circuits; nanodevices; nanosensors; nanostructure; porous membranes; post-integrated-circuit assembly; signal processing; Assembly; Biomembranes; CMOS process; CMOS technology; Dielectrophoresis; Integrated circuit layout; Integrated circuit technology; Semiconductor nanostructures; Signal processing; Very large scale integration; Complementary metal–oxide–semiconductor (CMOS); dielectrophoresis (DEP); nanotechnology; sensors; very large scale integration (VLSI);
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2006.869679
Filename :
1605222
Link To Document :
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