Title :
Model for the electric fields in LDD MOSFETs. I. Field peaks on the source side
Author :
Orlowski, Marius K. ; Werner, Christoph ; Klink, Joachim P.
Author_Institution :
Siemens AG, Munich, West Germany
fDate :
2/1/1989 12:00:00 AM
Abstract :
An analytic model for high electric fields on the source side in lightly doped drain (LDD)-type MOSFETs is proposed. The present model explains consistently the dependence of the source field peak on various relevant process and device parameters. It is shown that the source peak plays a role in avalanche and hot-carrier phenomena. The model predictions are compared with the results of extensive 2-D simulations
Keywords :
electric fields; insulated gate field effect transistors; semiconductor device models; 2-D simulations; LDD MOSFETs; analytic model; avalanche phenomena; device parameters; high electric fields; hot-carrier phenomena; lightly doped drain; process parameters; source field peak; source side; Degradation; Electrodes; Helium; Hot carriers; Ion beams; MOSFETs; Predictive models; Probability distribution; Shadow mapping; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
