Title :
Physics and Device Structures of Highly Efficient Silicon Quantum Dots Based Silicon Nitride Light-Emitting Diodes
Author :
Sung, Gun Yong ; Park, Nae-Man ; Shin, Jae-Heon ; Kim, Kyung-Hyun ; Kim, Tae-Youb ; Cho, Kwan Sik ; Huh, Chul
Author_Institution :
Bio-Photonic Devices Team, Daejeon
Abstract :
An electrically driven light emitter from silicon is a long-standing problem in silicon photonics. Recently, significant progress has been made using silicon quantum dots (Si QDs) embedded in the silicon nitride thin films, transparent doping layers and electrodes, and surface-modified structures. This paper provides an overview of the progress in the device physics and fabrications of the Si QD light-emitting diodes (LEDs) including new device structures to improve the light extraction efficiency as well as highlights in the growth of the Si QDs and their quantum confinement effects (QCEs)
Keywords :
elemental semiconductors; integrated optics; integrated optoelectronics; light emitting diodes; semiconductor quantum dots; silicon; silicon compounds; thin films; transparency; Si; SiN; device structures; electrically driven light emitter; electrodes; light extraction efficiency; light-emitting diodes; quantum confinement effects; silicon nitride LED; silicon nitride thin films; silicon photonics; silicon quantum dots; surface-modified structures; transparent doping layers; Doping; Electrodes; Fabrication; Light emitting diodes; Photonics; Physics; Potential well; Quantum dots; Semiconductor thin films; Silicon; Distributed Bragg reflector (DBR); full-color emission; light-emitting diode (LED); nanocrystals; quantum confinement effect (QCE); silicon quantum dot (Si QD); tunneling;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2006.885391
