Title :
21-GHz-Bandwidth Germanium-on-Silicon Photodiode Using Thin SiGe Buffer Layers
Author :
Huang, Zhihong ; Kong, Ning ; Guo, Xiangyi ; Liu, Mingguo ; Duan, Ning ; Beck, Ariane L. ; Banerjee, Sanjay K. ; Campbell, Joe C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX
Abstract :
Backside-illuminated germanium photodiodes fabricated on silicon substrate with two Si xGe1-x buffer layers are reported. At 1.3 mum, the responsivity was 0.62 A/W for reverse bias greater than 0.1 V. The 3-dB bandwidth was 21.5 GHz at 10-V reverse bias, achieving a bandwidth-efficiency product of 12.6 GHz
Keywords :
Ge-Si alloys; elemental semiconductors; germanium; photodetectors; photodiodes; silicon; 1.3 mum; 10 V; 21 GHz; 21.5 GHz; Ge-Si; Si; SiGe; SiGe buffer layers; backside illumination; germanium-on-silicon photodiode; photodetector; responsivity; silicon substrate; Bandwidth; Buffer layers; Crosstalk; Germanium silicon alloys; Optical interconnections; Optical receivers; Photodetectors; Photodiodes; Silicon germanium; Substrates; Germanium; photodetector; photodiode;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2006.884073
