• DocumentCode
    864181
  • Title

    21-GHz-Bandwidth Germanium-on-Silicon Photodiode Using Thin SiGe Buffer Layers

  • Author

    Huang, Zhihong ; Kong, Ning ; Guo, Xiangyi ; Liu, Mingguo ; Duan, Ning ; Beck, Ariane L. ; Banerjee, Sanjay K. ; Campbell, Joe C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX
  • Volume
    12
  • Issue
    6
  • fYear
    2006
  • Firstpage
    1450
  • Lastpage
    1454
  • Abstract
    Backside-illuminated germanium photodiodes fabricated on silicon substrate with two Si xGe1-x buffer layers are reported. At 1.3 mum, the responsivity was 0.62 A/W for reverse bias greater than 0.1 V. The 3-dB bandwidth was 21.5 GHz at 10-V reverse bias, achieving a bandwidth-efficiency product of 12.6 GHz
  • Keywords
    Ge-Si alloys; elemental semiconductors; germanium; photodetectors; photodiodes; silicon; 1.3 mum; 10 V; 21 GHz; 21.5 GHz; Ge-Si; Si; SiGe; SiGe buffer layers; backside illumination; germanium-on-silicon photodiode; photodetector; responsivity; silicon substrate; Bandwidth; Buffer layers; Crosstalk; Germanium silicon alloys; Optical interconnections; Optical receivers; Photodetectors; Photodiodes; Silicon germanium; Substrates; Germanium; photodetector; photodiode;
  • fLanguage
    English
  • Journal_Title
    Selected Topics in Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    1077-260X
  • Type

    jour

  • DOI
    10.1109/JSTQE.2006.884073
  • Filename
    4032656
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=864181