DocumentCode
86435
Title
Linear- and Geiger-Mode Characteristics of Al0.8Ga0.2As Avalanche Photodiodes
Author
Min Ren ; Yaojia Chen ; Wenlu Sun ; Xiao Jie Chen ; Johnson, Erik B. ; Christian, James F. ; Campbell, Joe C.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
Volume
26
Issue
24
fYear
2014
fDate
Dec.15, 15 2014
Firstpage
2480
Lastpage
2483
Abstract
We report Al0.8Ga0.2As avalanche photodiodes with low dark current and low excess noise. In linear mode when biased to a photocurrent gain of 200, a 150-μm diameter device exhibits dark current of 32 pA (180 nA/cm2). The external quantum efficiency is 31% at 490 nm and the excess noise factor corresponds to k ~ 0.15. In Geiger mode operation, low dark count probability of 10-5 at room temperature is reported.
Keywords
III-V semiconductors; aluminium compounds; avalanche photodiodes; dark conductivity; optical materials; photoconductivity; photodetectors; photoemission; Al0.8Ga0.2As; Al0.8Ga0.2As avalanche photodiodes; Geiger mode operation; Geiger-mode characteristics; current 32 pA; dark count probability; dark current; excess noise factor; external quantum efficiency; linear-mode characteristics; photocurrent gain; room temperature; size 150 mum; temperature 293 K to 298 K; wavelength 490 nm; Avalanche photodiodes; Dark current; Logic gates; Noise; Passivation; Photonics; Temperature measurement; Avalanche photodiodes; photodetectors;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2014.2359177
Filename
6910286
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