DocumentCode
864391
Title
Short-channel effect in fully depleted SOI MOSFETs
Author
Young, K. Konrad
Author_Institution
MIT Lincoln Lab., Lexington, MA, USA
Volume
36
Issue
2
fYear
1989
fDate
2/1/1989 12:00:00 AM
Firstpage
399
Lastpage
402
Abstract
The short-channel effect in fully depleted silicon-on-insulator MOSFETs has been studied by a two-dimensional analytical model and by computer simulation. The calculated values agree well with the simulation results. It is found that the vertical field through the depleted film strongly influences the lateral field across the source and drain regions. The short-channel effect can be significantly reduced by decreasing the silicon film thickness
Keywords
insulated gate field effect transistors; semiconductor device models; Si film thickness; computer simulation; fully depleted SOI MOSFETs; model; short-channel effect; two-dimensional analytical model; vertical field; Analytical models; Capacitance; Computer simulation; Dielectric constant; Doping; MOSFETs; Poisson equations; Semiconductor films; Silicon devices; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.19942
Filename
19942
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