40-GHz coplanar waveguide bandpass filters on silicon substrate

Author

Chan, K.T. ; Chen, C.Y. ; Chin, A. ; Hsieh, J.C. ; Liu, J. ; Duh, T.S. ; Lin, W.J.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

12

Issue

11

fYear

2002

Firstpage

429

Lastpage

431

Abstract

We report a very simple process to fabricate high performance filter on Si at 40 GHz using proton implantation. The filter has only -3.4-dB loss at peak transmission of 40 GHz with a broad 9-GHz bandwidth. In sharp contrast, the filter on 1.5-μm SiO₂ isolated Si has much worse transmission and reflection loss. This is the first demonstration of high performance filter at the millimeter-wave regime on Si with process compatible with current VLSI technology.

Keywords

band-pass filters; coplanar waveguide components; ion implantation; millimetre wave filters; passive filters; silicon; substrates; waveguide filters; -3.4 dB; 40 GHz; 9 GHz; CPW bandpass filters; EHF; MM-wave filter; Si; Si VLSI technology compatibility; Si substrate; coplanar waveguide bandpass filters; fabrication process; high performance filter; millimeter-wave regime; proton implantation; Band pass filters; Bandwidth; Coplanar waveguides; Isolation technology; Millimeter wave technology; Propagation losses; Protons; Reflection; Silicon; Very large scale integration;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2002.805535

Filename

1047038