High-frequency FET noise performance: a new approach

Author

Cappy, Alain ; Heinrich, Wolfgang

Author_Institution

Centre Hyperfrequences et Semiconducteurs, Univ. des Sci. et Tech. de Lille-Flandres-Artois, Villeneuve d´´Ascq, France

Volume

36

Issue

2

fYear

1989

fDate

2/1/1989 12:00:00 AM

Firstpage

403

Lastpage

409

Abstract

A formulation is proposed for calculating the FET noise performance in the high-frequency range (EHF). In the first step, the concept of a local small-signal equivalent circuit is introduced, and a novel method for calculating the FET admittance parameters is proposed. In the second step, a novel formulation of the impedance field is given. It is shown that this approach reflects better the frequency evolution of the noise source values and consequently gives a better noise figure

Keywords

electron device noise; field effect transistors; semiconductor device models; solid-state microwave devices; EHF; FET admittance parameters; FET noise performance calculation; formulation; frequency evolution; high-frequency range; impedance field; local small-signal equivalent circuit; model; noise figure; noise source values; Admittance; Circuit noise; Equivalent circuits; FETs; Frequency; Gallium arsenide; Impedance; Low-noise amplifiers; Millimeter wave technology; Noise figure;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.19943

Filename

19943