An automated millimeter-wave active load-pull measurement system based on six-port techniques

Author

Ghannouchi, Fadhel M. ; Bosisio, Renato G.

Author_Institution

Dept. of Electr. & Comput. Eng., Ecole Polytech. de Montreal, Que., Canada

Volume

41

Issue

6

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

957

Lastpage

962

Abstract

A millimeter-wave active load-pull measurement system for large-signal characterization of millimeter-wave transistors is presented. The characterization system uses two six-port junctions for simultaneous impedance and power flow measurements. Large-signal characterization of a GaAs FET operated in class A and class C at 28 GHz in terms of constant absorbed power contours, constant operating power gain contours and constant DC current contours in the load plane Z_L is presented. Effects of the unilaterality assumption on the operating power gain and output power are investigated for both class A and class C amplifier designs

Keywords

III-V semiconductors; Schottky gate field effect transistors; computerised instrumentation; electric impedance measurement; gallium arsenide; microwave amplifiers; microwave reflectometry; solid-state microwave devices; 28 GHz; FET; GaAs; III-V semiconductors; automated millimeter-wave active load-pull measurement; class A; class C; constant DC current contours; constant absorbed power contours; constant operating power gain contours; large-signal characterization; microwave amplifier; millimeter-wave transistors; power flow measurements; simultaneous impedance; six-port junctions; six-port techniques; unilaterality assumption; FETs; Fluid flow measurement; Gallium arsenide; Impedance measurement; Load flow; Millimeter wave measurements; Millimeter wave transistors; Power amplifiers; Power generation; Power measurement;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/19.199442

Filename

199442