Erbium-Doped Photonic Crystal Microcavity for Light Extraction Enhancement at 300 K

Author

Salomon, Antoine ; Calvo, Vincent ; Zelsmann, Marc ; Charvolin, Thomas ; Fedeli, Jean-Marc ; Hadji, Emmanuel

Author_Institution

CEA, Grenoble

Volume

12

Issue

6

fYear

2006

Firstpage

1592

Lastpage

1595

Abstract

We present optical characterization of silicon-on-insulator (SOI)-based photonic crystal (PC) microcavities doped with erbium and oxygen. Photoluminescence (PL) is recorded up to the room temperature. A large PL intensity enhancement is obtained compared to the case of identically implanted SOI wafer at 1.54 mum. Moreover, no temperature-quenching effect is observed

Keywords

erbium; ion implantation; micro-optics; microcavities; oxygen; photoluminescence; photonic crystals; silicon-on-insulator; 1.54 mum; 293 to 298 K; 300 K; Si-SiO₂:Er; Si-SiO₂:O₂; erbium-doped photonic crystal; implanted silicon-on-insulator wafer; intensity enhancement; light extraction enhancement; microcavity; optical characterization; photoluminescence; room temperature; silicon-on-insulator; Erbium; Etching; Microcavities; Nanoelectronics; Optical resonators; Personal communication networks; Photoluminescence; Photonic crystals; Silicon; Temperature; Erbium/oxygen implantation; light extraction; microcavity; photoluminescence (PL); photonic crystals (PCs); silicon-on-insulator (SOI);

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2006.885138

Filename

4032695