DocumentCode
864788
Title
Quantum Dots and Nanowires Grown by Metal–Organic Chemical Vapor Deposition for Optoelectronic Device Applications
Author
Tan, H.H. ; Sears, K. ; Mokkapati, S. ; Fu, Lan ; Kim, Yong ; McGowan, P. ; Buda, M. ; Jagadish, Chennupati
Author_Institution
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT
Volume
12
Issue
6
fYear
2006
Firstpage
1242
Lastpage
1254
Abstract
This paper discusses the growth of In(Ga)As quantum dots (QDs) and nanowires by metal-organic chemical vapor deposition and their application to optoelectronic devices. The performance characteristics of QD lasers and QD photodetectors as well as the selective area growth of QDs for integrated devices are reported
Keywords
MOCVD; integrated optoelectronics; nanowires; photodetectors; quantum dot lasers; semiconductor growth; semiconductor quantum dots; InGaAs; QD laser; QD photodetector; integrated devices; metal-organic chemical vapor deposition; nanowires; quantum dots; Chemical lasers; Chemical vapor deposition; MOCVD; Molecular beam epitaxial growth; Nanowires; Optoelectronic devices; Photodetectors; Quantum dot lasers; Quantum dots; Quantum well lasers; Integrated optoelectronics; nanowires; photodetectors; quantum dots; semiconductor lasers;
fLanguage
English
Journal_Title
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
1077-260X
Type
jour
DOI
10.1109/JSTQE.2006.882663
Filename
4032703
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