• DocumentCode
    864821
  • Title

    Understanding the strength of epoxy-polyimide interfaces for flip-chip packages

  • Author

    Hoontrakul, Pat ; Sperling, Les H. ; Pearson, Raymond A.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Lehigh Univ., Bethlehem, PA, USA
  • Volume
    3
  • Issue
    4
  • fYear
    2003
  • Firstpage
    159
  • Lastpage
    166
  • Abstract
    Polyimides are commonly used as organic passivation layers for microelectronic devices due to their unique combination of low dielectric constant, high thermal stability, and excellent mechanical properties. Polyimides are well known to have poor adhesion to epoxy resins. Many surface treatment methods have been developed to increase epoxy-polyimide adhesion. These include various ion beam, plasma treatment, or chemical treatment methods. The goal of this research is to understand the strength of epoxy-polyimide interfaces by studying the effect of polyimide chemical structure on epoxy-polyimide adhesion. The four polyimides chosen in this study are commonly used in the microelectronics industry: poly (pyromellitic dianhydride-oxydianiline [PMDA-ODA], poly (3,3´,4,4´-biphenyltetracarboxylic dianhydride-phenylene diamine [BPDA-PDA], poly (hexafluoroisopropylidene-diphthalic anhydride-oxydianiline) [6FDA-ODA], and 5(6) -Amino-1-(4-aminophenyl)-1,3,3, trimethylindanbenzophenonetetacarboxylic dianhydride copolymer [BTDA-DAPI]. The adhesive strengths between an epoxy resin and these four polyimides were characterized using interfacial fracture mechanics and the critical interfacial strain energy release rates ranged from 20 to 179 J/m2 depending on the particular polyimide used. The loci of failure for these epoxy-polyimide interfaces were analyzed using scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and Fourier transform infrared spectroscopy (FT-IR), and found to be at the interphase region for all four interfaces. It is interesting that the strength of the interfaces appears to be related to the predicted interfacial widths from solubility parameter theory.
  • Keywords
    Fourier transform spectra; X-ray photoelectron spectra; adhesion; adhesives; electronics packaging; epitaxial layers; epoxy insulation; flip-chip devices; fracture mechanics; infrared spectra; nanoelectronics; scanning electron microscopy; semiconductor junctions; 5(6)-amino-1-(4-aminophenyl)-l,3,3, trimethylindanbenzophenonete-tacarboxylic dianhydride copolymer; Fourier transform infrared spectroscopy; X-ray photoelectron spectroscopy; beam treatment; chemical treatment; critical interfacial strain energy release rates; dielectric constant; epoxy resins adhesion; epoxy-polyimide adhesion; epoxy-polyimide interfaces; flip-chip packages; interfacial fracture mechanics; microelectronic devices; organic passivation layers; plasma treatment; poly (3,3,4,4-biphenyltetracarboxytic dianhy-dride-phenylene diamine); poly (hexafluoroisopropy-lidene-diphthalic anhydride-oxydianiline); poly (pyrometallic dianhydride-oxydianiline); polyimide chemical structure; polyimides; predicted interfacial widths; scanning electron microscopy; solubility parameter theory; thermal stability; Adhesives; Chemicals; Epoxy resins; High-K gate dielectrics; Microelectronics; Packaging; Passivation; Polyimides; Scanning electron microscopy; Thermal stability;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2003.821543
  • Filename
    1261729