InAs/InP 1550 nm quantum dash semiconductor optical amplifiers

Author

Bilenca, A. ; Alizon, R. ; Mikhelashvili, V. ; Eisenstein, G. ; Schwertberger, R. ; Gold, D. ; Reithmaier, J.P. ; Forchel, A.

Author_Institution

Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel

Volume

38

Issue

22

fYear

2002

Firstpage

1350

Lastpage

1351

Abstract

Quantum confined laser and optical amplifier structures based on quantum dots and dashes (QD) have been at the forefront of optoelectronics device research for several years. Owing to their superb optoelectronic properties such as wide gain bandwidth, low threshold current density, low a parameter and fast switching response, QD-based devices are expected to play a major role in future fibre optics systems and networks.

Keywords

III-V semiconductors; indium compounds; multiwave mixing; quantum dot lasers; semiconductor optical amplifiers; spontaneous emission; 1550 nm; CW signals; InAs-InP; dynamical nonlinear characteristics; fast switching response; four-wave mixing; gas source MBE; low alpha parameter; low threshold current density; quantum confined optical amplifier; quantum dash semiconductor optical amplifiers; separate confinement heterostructure; small signal gain; spontaneous emission spectrum; symmetric conversion efficiency response; wide gain bandwidth;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20020928

Filename

1047090