Title :
Low-threshold current GaAsSb/GaAs quantum well lasers grown by solid source molecular beam epitaxy
Author :
Liu, Po-Wei ; Lee, Ming-Han ; Lin, Hao-Hsiung ; Chen, Jhe-Ren
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
10/24/2002 12:00:00 AM
Abstract :
Low threshold current density GaAsSb/GaAs quantum well lasers were grown on GaAs substrate using solid source molecular beam epitaxy. The laser emits 1.28 μm light output and demonstrates a very low threshold current density of 210 A/cm2.
Keywords :
Debye temperature; III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; 1.28 micron; GaAsSb-GaAs; cavity length dependence; characteristic temperature; double quantum well; inverse external quantum efficiency; low-threshold current lasers; pulsed mode; quantum well lasers; solid source molecular beam epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020932
