• DocumentCode
    865082
  • Title

    Low-threshold current GaAsSb/GaAs quantum well lasers grown by solid source molecular beam epitaxy

  • Author

    Liu, Po-Wei ; Lee, Ming-Han ; Lin, Hao-Hsiung ; Chen, Jhe-Ren

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • Volume
    38
  • Issue
    22
  • fYear
    2002
  • fDate
    10/24/2002 12:00:00 AM
  • Firstpage
    1354
  • Lastpage
    1355
  • Abstract
    Low threshold current density GaAsSb/GaAs quantum well lasers were grown on GaAs substrate using solid source molecular beam epitaxy. The laser emits 1.28 μm light output and demonstrates a very low threshold current density of 210 A/cm2.
  • Keywords
    Debye temperature; III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; 1.28 micron; GaAsSb-GaAs; cavity length dependence; characteristic temperature; double quantum well; inverse external quantum efficiency; low-threshold current lasers; pulsed mode; quantum well lasers; solid source molecular beam epitaxy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020932
  • Filename
    1047093
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=865082