Title :
Influence of the SRO as passivation layer on the microwave attenuation losses of the CPWs fabricated on HR-Si
Author :
Reynoso-Hernández, J.A. ; Rangel-Rojo, Raúl ; Aceves, M. ; Zaldivar, I. ; Sánchez, L.E. ; Herrera, M.
Author_Institution :
Div. de Fisica Aplicada, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada (CICESE), Mexico
Abstract :
In this letter, silicon rich oxide (SRO) is used as the passivation layer of coplanar wave guides (CPWs) fabricated on high resistivity silicon (HR-Si). The microwave performance of the CPWs is evaluated computing the attenuation loss (/spl alpha/) of the device in the 0.045-50 GHz frequency range. It is shown that for frequencies lower than 5 GHz the losses of CPWs using SRO as a passivation layer are lower than those of CPWs using SiO/sub 2/. It is also shown that using a combination of thermal and CVD SiO/sub 2/, a reduction of the losses of CPWs is obtained.
Keywords :
S-parameters; coplanar waveguides; dielectric losses; impedance matrix; passivation; silicon; silicon compounds; transmission line matrix methods; 0.045 to 50 GHz; S parameters; Si; SiO/sub 2/; attenuation loss; cascade probe; coplanar probes; coplanar waveguides; high resistivity silicon; line impedance; matrix wave propagation; microwave performance; passivation layer transmission; silicon rich oxide passivation layer; transmission matrix; Analog circuits; Attenuation; Chemical vapor deposition; Conductivity; Coplanar waveguides; Gases; Microwave devices; Oxidation; Passivation; Silicon;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2003.819967
