Influence of the SRO as passivation layer on the microwave attenuation losses of the CPWs fabricated on HR-Si

Author

Reynoso-Hernández, J.A. ; Rangel-Rojo, Raúl ; Aceves, M. ; Zaldivar, I. ; Sánchez, L.E. ; Herrera, M.

Author_Institution

Div. de Fisica Aplicada, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada (CICESE), Mexico

Volume

13

Issue

12

fYear

2003

Firstpage

508

Lastpage

510

Abstract

In this letter, silicon rich oxide (SRO) is used as the passivation layer of coplanar wave guides (CPWs) fabricated on high resistivity silicon (HR-Si). The microwave performance of the CPWs is evaluated computing the attenuation loss (/spl alpha/) of the device in the 0.045-50 GHz frequency range. It is shown that for frequencies lower than 5 GHz the losses of CPWs using SRO as a passivation layer are lower than those of CPWs using SiO/sub 2/. It is also shown that using a combination of thermal and CVD SiO/sub 2/, a reduction of the losses of CPWs is obtained.

Keywords

S-parameters; coplanar waveguides; dielectric losses; impedance matrix; passivation; silicon; silicon compounds; transmission line matrix methods; 0.045 to 50 GHz; S parameters; Si; SiO/sub 2/; attenuation loss; cascade probe; coplanar probes; coplanar waveguides; high resistivity silicon; line impedance; matrix wave propagation; microwave performance; passivation layer transmission; silicon rich oxide passivation layer; transmission matrix; Analog circuits; Attenuation; Chemical vapor deposition; Conductivity; Coplanar waveguides; Gases; Microwave devices; Oxidation; Passivation; Silicon;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2003.819967

Filename

1261766