Title :
Investigation of InAs/GaAs quantum-dot infrared photodetector with In0.5Ga0.5P dark current blocking layer
Author :
Jiang, Lin ; Li, Sheng S. ; Yeh, Nien-Tze ; Chyi, Jen-Inn ; Tidrow, M.Z.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
fDate :
10/24/2002 12:00:00 AM
Abstract :
A novel InAs/GaAs quantum-dot infrared photodetector with an In0.5Ga0.5P dark current blocking layer for long-wavelength infrared (LWIR) detection has been developed in this work. Very low dark current densities were obtained at Vb = - 0.5 V (10-10 A/cm-2) and Vb = + 0.5 V (10-11 A/cm-2) at 77 K. Normal incident responsivity up to 90 K was observed in this device. The background limited performance (BLIP) detectivity (D*BLIP) was found to be 3.36 × 109 cm-Hz12//W at λp = 12.2 μm with a corresponding responsivity of 55 mA/W at Vb = - 1.7 V and T = 77 K.
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; infrared detectors; semiconductor quantum dots; -0.5 V; -1.7 V; 0.5 V; 12.2 micron; 77 K; In0.5Ga0.5P; In0.5Ga0.5P dark current blocking layer; InAs-GaAs; InAs/GaAs quantum-dot infrared photodetector; background limited performance detectivity; long-wavelength infrared detection; normal incident responsivity; very low dark current densities;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020904
