DocumentCode :
865341
Title :
Investigations on Ta2O5/ZnO insulator-semiconductor interfaces
Author :
Nandi, S.K. ; Choi, W.K. ; Noh, Y.S. ; Oh, M.S. ; Maikap, S. ; Hwang, N.M. ; Kim, D.-Y. ; Chatterjee, S. ; Samanta, S.K. ; Maiti, C.K.
Author_Institution :
Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
Volume :
38
Issue :
22
fYear :
2002
fDate :
10/24/2002 12:00:00 AM
Firstpage :
1390
Lastpage :
1392
Abstract :
The electrical and interfacial properties of Ta2O5/ZnO/p-Si metal-insulator-semiconductor structures are investigated using high frequency capacitance-voltage and conductance-voltage characteristics. Charge trapping behaviour under Fowler-Nordheim constant current stressing is also reported. An interface state density (1.22 × 1012 cm-2 eV-1) has been observed for the Ta2O5/ZnO interface.
Keywords :
MIS structures; electronic density of states; interface states; semiconductor-insulator boundaries; tantalum compounds; wide band gap semiconductors; zinc compounds; Fowler-Nordheim constant current stressing; MIS structures; Ta2O5-ZnO-Si; charge trapping behaviour; electrical properties; high frequency capacitance-voltage characteristics; high frequency conductance-voltage characteristics; insulator-semiconductor interfaces; interface state density; interfacial properties; metal-insulator-semiconductor structures; wide bandgap semiconductor;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20020944
Filename :
1047118
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=865341
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