• DocumentCode
    865341
  • Title

    Investigations on Ta2O5/ZnO insulator-semiconductor interfaces

  • Author

    Nandi, S.K. ; Choi, W.K. ; Noh, Y.S. ; Oh, M.S. ; Maikap, S. ; Hwang, N.M. ; Kim, D.-Y. ; Chatterjee, S. ; Samanta, S.K. ; Maiti, C.K.

  • Author_Institution
    Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
  • Volume
    38
  • Issue
    22
  • fYear
    2002
  • fDate
    10/24/2002 12:00:00 AM
  • Firstpage
    1390
  • Lastpage
    1392
  • Abstract
    The electrical and interfacial properties of Ta2O5/ZnO/p-Si metal-insulator-semiconductor structures are investigated using high frequency capacitance-voltage and conductance-voltage characteristics. Charge trapping behaviour under Fowler-Nordheim constant current stressing is also reported. An interface state density (1.22 × 1012 cm-2 eV-1) has been observed for the Ta2O5/ZnO interface.
  • Keywords
    MIS structures; electronic density of states; interface states; semiconductor-insulator boundaries; tantalum compounds; wide band gap semiconductors; zinc compounds; Fowler-Nordheim constant current stressing; MIS structures; Ta2O5-ZnO-Si; charge trapping behaviour; electrical properties; high frequency capacitance-voltage characteristics; high frequency conductance-voltage characteristics; insulator-semiconductor interfaces; interface state density; interfacial properties; metal-insulator-semiconductor structures; wide bandgap semiconductor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020944
  • Filename
    1047118
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=865341