Title :
Parametric amplification in transistors
Author :
Hyde, F.J. ; G¿¿k, I.
Author_Institution :
University College of North Wales, Department of Electronic Engineering, Bangor, UK
fDate :
3/1/1965 12:00:00 AM
Abstract :
Experimental results are presented which show that parametric action can arise in transistors, owing to pumping of the collector-base diode. An increase in gain can be obtained when a u.h.f. pump is applied to an h.f. amplifier and high conversion gain in a u.h.f.-h.f. downconvertor. Noise performance of an h.f. amplifier can also be improved by pumping.
Keywords :
characteristics measurement; parametric amplifiers; transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19650008
