Title :
Amplifying characteristics of 1.55-/spl mu/m polarization-insensitive SOAs with MQW and strained-bulk active Layers for device application
Author :
Itoh, Masayuki ; Shibata, Yasuo ; Kakitsuka, Takaaki ; Kadota, Yoshiaki ; Sugiura, Hideo ; Tohmori, Yuichi
Author_Institution :
Nippon Telegraph & Telephone, Photonics Labs., Kanagawa
fDate :
3/1/2006 12:00:00 AM
Abstract :
Fundamental amplifying characteristics of 1.55-mum semiconductor optical amplifiers (SOAs) that contain multiquantum well (MQW) active layers with an optimized tensile strain or bulk active layers with various tensile strains were investigated. Both types of SOAs have their own merits and demerits. For device application in networks, driving current and wavelength in the low-polarization-sensitivity condition are very important, but they have not been clarified yet. The results of the present investigation clarify the driving current and wavelength characteristics of low-polarization-sensitivity SOAs with MQW and strained-bulk active layers. The low-polarization-sensitivity condition of SOAs with a strained-bulk active layer is shown to have a very wide range of driving current and wavelength for network-device application. These results, with other requirements taken into account, provide guidelines for choosing the type of SOA most suitable for a given application
Keywords :
light polarisation; quantum well devices; semiconductor optical amplifiers; semiconductor quantum wells; 1.55 mum; MQW; bulk active layers; driving current; polarization-insensitive SOA; semiconductor optical amplifier; tensile strain; Guidelines; Optical fiber networks; Optical polarization; Optical sensors; Optical signal processing; Quantum well devices; Semiconductor optical amplifiers; Stimulated emission; Tellurium; Tensile strain; Amplifying characteristics; device application; low-polarization-sensitivity condition; multiquantum well (MQW); polarization-insensitive semiconductor optical amplifier (SOA); strained bulk;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2005.863298