Title :
Magnetism and crystal structure of Fe/Si multilayered films prepared by ion beam sputtering
Author :
Kubota, K. ; Nagakubo, M. ; Naoe, M.
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
fDate :
9/1/1990 12:00:00 AM
Abstract :
Fe/Si multilayered films have been prepared by ion-beam sputtering. The dependence of their crystal structure and magnetic properties on the individual layer thicknesses has been investigated. The annealing effects for those films have also been examined. The films with Fe and Si layer thickness of more than 85 Å clearly exhibited multilayered microstructure. Hc of the films with δFe of 10 Å had a minimum value of 1.5 Oe at δSi of about 4 Å. For the films with δSi of 20 Å, Hc had a relatively high value of about 50 Oe; it reached its minimum value of about 2 Oe at δSi of about 40 Å after annealing at 300°C for 1 h
Keywords :
annealing; coercive force; crystal atomic structure of elements; crystal microstructure; elemental semiconductors; iron; magnetic thin films; silicon; sputtered coatings; 300 degC; Fe-Si; annealing effects; coercive field; crystal structure; ion beam sputtering; layer thicknesses; magnetic properties; microstructure; multilayered films; semiconductor; Annealing; Coercive force; Ion beams; Iron; Magnetic films; Magnetic properties; Saturation magnetization; Semiconductor films; Sputtering; X-ray diffraction;
Journal_Title :
Magnetics, IEEE Transactions on