DocumentCode
865763
Title
Double-gate thin-film transistor
Author
Abraham, D. ; Poehler, T.O.
Author_Institution
Johns Hopkins University, Applied Physics Laboratory, Silver Spring, USA
Volume
1
Issue
2
fYear
1965
fDate
4/1/1965 12:00:00 AM
Firstpage
49
Abstract
A thin-film transistor (t.f.t.) with opposing gate electrodes completely isolated from the source-drain circuit has demonstrated greater conductivity modulation with the signal applied between the two gates than the same t.f.t. connected with the signal applied between a gate and the source in the conventional manner. This result precludes the assumption that charge injected into the semiconductor region accounts for the modulation.
Keywords
modulation; transistors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19650047
Filename
4205407
Link To Document