DocumentCode :
865774
Title :
Nonlinear-capacitance devices
Author :
Owens, A.R. ; White, Gannon
Author_Institution :
University College of North Wales, School of Engineering Science, Bangor, UK
Volume :
1
Issue :
2
fYear :
1965
fDate :
4/1/1965 12:00:00 AM
Firstpage :
49
Lastpage :
50
Abstract :
The capacitance characteristics of normal and `hyperabrupt¿ junction diodes are first reviewed. A discontinuity in the slope of the capacitance characteristic of the field-effect transistor is then discusscd; the variation in loss in the vicinity of the pinchoff region is found to be consistent with a qualitative theory for the effect.
Keywords :
capacitance; dielectric devices; semiconductor devices; semiconductor diodes; transistors;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19650048
Filename :
4205408
Link To Document :
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