Title :
Nonlinear-capacitance devices
Author :
Owens, A.R. ; White, Gannon
Author_Institution :
University College of North Wales, School of Engineering Science, Bangor, UK
fDate :
4/1/1965 12:00:00 AM
Abstract :
The capacitance characteristics of normal and `hyperabrupt¿ junction diodes are first reviewed. A discontinuity in the slope of the capacitance characteristic of the field-effect transistor is then discusscd; the variation in loss in the vicinity of the pinchoff region is found to be consistent with a qualitative theory for the effect.
Keywords :
capacitance; dielectric devices; semiconductor devices; semiconductor diodes; transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19650048