DocumentCode :
865847
Title :
Investigation of an L–band tunnel–diode amplifier at low temperatures
Author :
Stachejko, V.
Volume :
52
Issue :
11
fYear :
1964
Firstpage :
1368
Lastpage :
1369
Keywords :
Gallium arsenide; Germanium; L-band; Low-noise amplifiers; Noise figure; Noise measurement; Noise reduction; Semiconductor device noise; Semiconductor diodes; Temperature dependence;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1964.3392
Filename :
1445322
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=865847
