DocumentCode
865896
Title
Interaction factors of multi-layered magnetic thin film system
Author
Guo, Minyi ; Indeck, R.S.
Author_Institution
Dept. of Electr. Eng., Washington Univ., St. Louis, MO, USA
Volume
26
Issue
5
fYear
1990
fDate
9/1/1990 12:00:00 AM
Firstpage
2415
Lastpage
2417
Abstract
Magnetostatic interaction factors of coupled magnetic thin films are proposed to assist the analysis of the electric and magnetic properties of such systems. The factors, f y and f z, which are diagonal elements of an interaction tensor, are proportional to the interaction energies due to the magnetization in y and z directions. Three-dimensional mathematical expressions of these factors are developed. The interaction energy of the system in each film can be determined numerically using these factors. As a result, the magnetoresistive character of the system can be obtained numerically. The interaction factor decreases rapidly as the distance is increased, with the rate of decrease being faster for thinner films. The numerical solution of the output character of a coupled thin-film read head agrees with previous experimental findings
Keywords
magnetic heads; magnetic recording; magnetic thin film devices; magnetisation; magnetoresistance; interaction energy; magnetization; magnetoresistive character; magnetostatic interaction factors; multi-layered magnetic thin film system; read head; Couplings; Magnetic analysis; Magnetic films; Magnetic heads; Magnetic properties; Magnetization; Magnetoresistance; Magnetostatics; Tensile stress; Transistors;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.104749
Filename
104749
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