• DocumentCode
    865896
  • Title

    Interaction factors of multi-layered magnetic thin film system

  • Author

    Guo, Minyi ; Indeck, R.S.

  • Author_Institution
    Dept. of Electr. Eng., Washington Univ., St. Louis, MO, USA
  • Volume
    26
  • Issue
    5
  • fYear
    1990
  • fDate
    9/1/1990 12:00:00 AM
  • Firstpage
    2415
  • Lastpage
    2417
  • Abstract
    Magnetostatic interaction factors of coupled magnetic thin films are proposed to assist the analysis of the electric and magnetic properties of such systems. The factors, fy and fz, which are diagonal elements of an interaction tensor, are proportional to the interaction energies due to the magnetization in y and z directions. Three-dimensional mathematical expressions of these factors are developed. The interaction energy of the system in each film can be determined numerically using these factors. As a result, the magnetoresistive character of the system can be obtained numerically. The interaction factor decreases rapidly as the distance is increased, with the rate of decrease being faster for thinner films. The numerical solution of the output character of a coupled thin-film read head agrees with previous experimental findings
  • Keywords
    magnetic heads; magnetic recording; magnetic thin film devices; magnetisation; magnetoresistance; interaction energy; magnetization; magnetoresistive character; magnetostatic interaction factors; multi-layered magnetic thin film system; read head; Couplings; Magnetic analysis; Magnetic films; Magnetic heads; Magnetic properties; Magnetization; Magnetoresistance; Magnetostatics; Tensile stress; Transistors;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.104749
  • Filename
    104749