DocumentCode :
865896
Title :
Interaction factors of multi-layered magnetic thin film system
Author :
Guo, Minyi ; Indeck, R.S.
Author_Institution :
Dept. of Electr. Eng., Washington Univ., St. Louis, MO, USA
Volume :
26
Issue :
5
fYear :
1990
fDate :
9/1/1990 12:00:00 AM
Firstpage :
2415
Lastpage :
2417
Abstract :
Magnetostatic interaction factors of coupled magnetic thin films are proposed to assist the analysis of the electric and magnetic properties of such systems. The factors, fy and fz, which are diagonal elements of an interaction tensor, are proportional to the interaction energies due to the magnetization in y and z directions. Three-dimensional mathematical expressions of these factors are developed. The interaction energy of the system in each film can be determined numerically using these factors. As a result, the magnetoresistive character of the system can be obtained numerically. The interaction factor decreases rapidly as the distance is increased, with the rate of decrease being faster for thinner films. The numerical solution of the output character of a coupled thin-film read head agrees with previous experimental findings
Keywords :
magnetic heads; magnetic recording; magnetic thin film devices; magnetisation; magnetoresistance; interaction energy; magnetization; magnetoresistive character; magnetostatic interaction factors; multi-layered magnetic thin film system; read head; Couplings; Magnetic analysis; Magnetic films; Magnetic heads; Magnetic properties; Magnetization; Magnetoresistance; Magnetostatics; Tensile stress; Transistors;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.104749
Filename :
104749
Link To Document :
بازگشت