Title :
Formation of TiSi2 and shallow junction by As+ ion-beam mixing and infrared rapid heat treatment
Author :
Ye, Min ; Lin, Hui-Wang ; Tsien, Pei-Hsin ; Zhang, Jing-Ping ; Yin, Shi-Duan
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fDate :
3/1/1989 12:00:00 AM
Abstract :
A technique for forming shallow junctions with low-resistance silicide contacts developed for the use in VLSI with scaled MOSFETs is discussed. The salicide (self-aligned silicide) MOSFET gate and source-drain features self-aligned refractory metal silicide and are isolated from one another even without any insulating spacer on the gate sides. A critical step in such a MOSFET fabrication process is the ion implantation through metal silicidation technique, which includes As+ ion-beam-induced titanium-silicon interface mixing and infrared rapid heat treatment to form simultaneously the n+-p junction and a high-quality TiN covered TiSi2 contact layer
Keywords :
VLSI; annealing; field effect integrated circuits; insulated gate field effect transistors; integrated circuit technology; ion implantation; metallisation; ohmic contacts; semiconductor technology; titanium compounds; As+ ion beam mixing; MOSFET gate; RTA; Ti-Si mixing; TiN-TiSi2-Si; TiSi2 contact layer; TiSi2 formation; VLSI; infrared rapid heat treatment; ion beam induced mixing; ion implantation through metal silicidation technique; low-resistance silicide contacts; ohmic contacts; rapid thermal annealing; salicide; scaled MOSFETs; self-aligned refractory metal silicide; self-aligned silicide; shallow junctions formation; Fabrication; Heat treatment; Infrared heating; Insulation; Ion implantation; MOSFETs; Silicidation; Silicides; Tin; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
