High-performance poly-Si TFTs with ECR-plasma hydrogen passivation

Author

Unagami, Takashi ; Takeshita, Tastuya

Author_Institution

Electr. Commun. Lab., NTT, Tokyo, Japan

Volume

36

Issue

3

fYear

1989

fDate

3/1/1989 12:00:00 AM

Firstpage

529

Lastpage

533

Abstract

High-performance thin-film transistors (TFTs) with electron-cyclotron resonance (ECR) plasma hydrogen passivation fabricated by the use of laser-recrystallized multiple-strip-structure poly-Si film are discussed. These TFTs have n-channel enhancement-mode characteristics with a large transconductance, a high switching ratio, and a threshold voltage as low as 0.4 v. The ECR-plasma hydrogen passivation of laser-recrystallized poly-Si, reduces the trap density of poly-Si and increases the carrier mobility thus, desirable TFT characteristics are obtained. This passivation increased the transconductance (g_m) of a TFT and decreased the leakage current between the source and the drain. As a result, a switching ratio as high as 2.5×10⁹ and very low leakage current of the order of 10¹⁴ A can be achieved by these high-performance TFTs

Keywords

elemental semiconductors; laser beam annealing; passivation; silicon; thin film transistors; 0.4 V; 1E-14 A; ECR-plasma; H plasma passivation; TFTs; carrier mobility; electron-cyclotron resonance; laser-recrystallized; leakage current; multiple-strip-structure poly-Si film; n-channel enhancement-mode characteristics; polycrystalline Si; switching ratio; thin-film transistors; threshold voltage; transconductance; trap density; Electron traps; Hydrogen; Leakage current; Passivation; Plasma density; Plasma properties; Resonance; Thin film transistors; Threshold voltage; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.19964

Filename

19964