Title :
Arsenic polyps on contacts to GaAs
Author :
Goronkin, Herbert ; Convey, D.
Author_Institution :
Motorola Inc., Tempe, AZ, USA
fDate :
3/1/1989 12:00:00 AM
Abstract :
Features resembling polyps composed of As2O3 observed on GaAs devices under two conditions are discussed. In one case they appear on top of multilayer metal contacts on GaAs and are related to the presence of Au in the contact materials that reacts with underlying GaAs. In the other case, they appear both on metal and exposed GaAs surfaces and are related to the presence of humidity acting under the influence of metal-semiconductor contact potentials
Keywords :
III-V semiconductors; failure analysis; gallium arsenide; humidity; ohmic contacts; semiconductor-metal boundaries; As2O3 anomalous growths; As2O3 polyps; GaAs devices; contacts to GaAs; exposed GaAs surfaces; humidity; metal-semiconductor contact potentials; multilayer metal contacts; presence of Au; Capacitance; Circuits; Electrodes; Gallium arsenide; Gold; Ohmic contacts; P-n junctions; Silicon; Size measurement; Transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
