Title :
Plasma-anodized thin-film capacitors for integrated circuits
Author :
Tibol, G.J. ; Kaufman, W.M.
Author_Institution :
General Instrument Corp., Newark, N.J.
Abstract :
This paper presents the characteristics of Al2O3capacitors formed by the relatively new technique of gaseous plasma anodization. This process can be incorporated into a thin-film deposition process cycle thereby providing the advantage of minimizing contamination possibilities. The formation technique is briefly described and device properties are presented in detail.
Keywords :
Capacitors; Chemical vapor deposition; Conductive films; Dielectrics; Fabrication; Instruments; Plasma devices; Plasma properties; Plasma sources; Thin film circuits;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1964.3431
