Title :
A numerical analysis of submicrometer InP-transferred electron devices
Author :
Wu, K.F. ; Shaw, M.P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wayne State Univ., Detroit, MI, USA
fDate :
3/1/1989 12:00:00 AM
Abstract :
A numerical technique combining the Boltzmann transport equation and a cathode mobility model has been used to simulate the nonuniform field configurations and the static and dynamic transport behavior of submicrometer InP-transferred electron devices (TEDs). Significant interrelated controlling features for the 70-230-GHz operation of these devices have been analyzed. They determine the manifestation of the current instabilities in the following ways: (1) the length has a significant effect on the velocity-field characteristics for submicrometer TEDs, and thus on the oscillation threshold as well as the upper-frequency limit for transit-time oscillations; and (2) the cathode mobility (boundary condition), doping density, and bias acting together have a dominant effect on the threshold and cutoff of the current instability. The numerical results can be used to determine the optimum efficiency and frequency of actual devices
Keywords :
Gunn devices; III-V semiconductors; indium compounds; numerical analysis; semiconductor device models; 0.1 to 1 micron; 70 to 230 GHz; Boltzmann transport equation; EHF; Gunn devices; InP transferred electron devices; TEDs; bias; boundary condition; cathode mobility model; current instabilities; doping density; dynamic transport behavior; interrelated controlling features; nonuniform field configurations; numerical analysis; numerical results; numerical technique; optimum efficiency; oscillation threshold; submicrometer TEDs; transit-time oscillations; upper-frequency limit; velocity-field characteristics; Atomic measurements; Cathodes; Electron devices; Frequency; Gallium arsenide; Humidity; Indium phosphide; Numerical analysis; Scanning electron microscopy; X-ray imaging;
Journal_Title :
Electron Devices, IEEE Transactions on
