• DocumentCode
    86634
  • Title

    High Temperature Operation of 1060-nm High-Brightness Photonic Band Crystal Lasers With Very Low Astigmatism

  • Author

    Miah, Md Jarez ; Kettler, Thorsten ; Kalosha, Vladimir P. ; Posilovic, Kristijan ; Bimberg, Dieter H. ; Pohl, Johannes ; Weyers, Markus

  • Author_Institution
    Inst. of Solid State Phys., Tech. Univ. of Berlin, Berlin, Germany
  • Volume
    21
  • Issue
    6
  • fYear
    2015
  • fDate
    Nov.-Dec. 2015
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Thermally stable and nearly astigmatism free 1060-nm high-brightness photonic band crystal lasers are presented. A thick asymmetric waveguide with an optimized doping profile is employed. The prominent mode-discrimination property of the structure yields highly stable laser beam characteristics (i.e., beam quality factor M2, astigmatism) regardless of operating current and temperatures up to 80 °C. Ridge waveguide lasers with 6-μm ridge width and 2.64-mm cavity length provide 1.8-W output power and 61-MW · cm-2 · sr-1 brightness in continuous-wave mode at T = 20 °C. Full width at half maximum beam divergence remains below 11° in lateral and 15° in vertical direction up to the highest output power. Output power decreases with increasing heat sink temperature, however, a still large value of 1.3 W is achieved at T = 80 °C. Excellent beam quality with both lateral and vertical M2 <; 1.9 is obtained across the full investigated operating range up to 80 °C heat sink temperature. Astigmatism varies only between 0.4 to 2 μm at all operating conditions.
  • Keywords
    aberrations; heat sinks; laser beams; laser modes; photonic crystals; ridge waveguides; semiconductor lasers; thermal stability; thermo-optical effects; waveguide lasers; astigmatism free high-brightness photonic band crystal lasers; beam quality factor; cavity length; continuous-wave mode; full width at half maximum beam divergence; heat sink temperature; high temperature operation; highly stable laser beam characteristics; mode-discrimination property; optimized doping profile; output power; power 1.3 W; power 1.8 W; ridge waveguide lasers; ridge width; size 2.64 mm; size 6 mum; temperature 20 degC; temperature 80 degC; thermal stability; thick asymmetric waveguide; wavelength 0.4 mum to 2 mum; wavelength 1060 nm; Laser beams; Laser modes; Measurement by laser beam; Optical waveguides; Power lasers; Semiconductor lasers; Waveguide lasers; Semiconductor laser; high-brightness laser; high-power laser; low astigmatism; narrow beam divergence; |Semiconductor laser;
  • fLanguage
    English
  • Journal_Title
    Selected Topics in Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    1077-260X
  • Type

    jour

  • DOI
    10.1109/JSTQE.2015.2410034
  • Filename
    7054440