• DocumentCode
    866366
  • Title

    Gridistor—A new field-effect device

  • Author

    Teszner, S. ; Gicquel, R.

  • Author_Institution
    Centre National d´´Etudes des Télécommunications, France
  • Volume
    52
  • Issue
    12
  • fYear
    1964
  • Firstpage
    1502
  • Lastpage
    1513
  • Abstract
    This article concerns a new category of field effect transistors currently being developed which are derived from the Tecnetron (known as the Fieldtron in the U.S.A.) and which use the principal of centripetal striction and have a multichannel structure. By this development it is intended that the advantages of bipolar and field effect transistors be combined insofar as this is possible. In the theoretical part of the article the peculiarities of centripetal striction are discussed. It is shown that since the multichannel structure of the Gridistor removes the limitations arising from the restriction on the degrees of freedom, it eliminates the disadvantages of centripetal striction while retaining its advantages. The various geometries of the Gridistor and the techniques for realizing them are then described with particular attention to their remarkable suitability for integrated circuits. The results obtained are then given briefly and prospects for the future are outlined.
  • Keywords
    Bandwidth; FETs; Frequency; Geometry; Helium; Impedance; Low voltage; Noise level; Preamplifiers; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1964.3439
  • Filename
    1445369