DocumentCode :
866366
Title :
Gridistor—A new field-effect device
Author :
Teszner, S. ; Gicquel, R.
Author_Institution :
Centre National d´´Etudes des Télécommunications, France
Volume :
52
Issue :
12
fYear :
1964
Firstpage :
1502
Lastpage :
1513
Abstract :
This article concerns a new category of field effect transistors currently being developed which are derived from the Tecnetron (known as the Fieldtron in the U.S.A.) and which use the principal of centripetal striction and have a multichannel structure. By this development it is intended that the advantages of bipolar and field effect transistors be combined insofar as this is possible. In the theoretical part of the article the peculiarities of centripetal striction are discussed. It is shown that since the multichannel structure of the Gridistor removes the limitations arising from the restriction on the degrees of freedom, it eliminates the disadvantages of centripetal striction while retaining its advantages. The various geometries of the Gridistor and the techniques for realizing them are then described with particular attention to their remarkable suitability for integrated circuits. The results obtained are then given briefly and prospects for the future are outlined.
Keywords :
Bandwidth; FETs; Frequency; Geometry; Helium; Impedance; Low voltage; Noise level; Preamplifiers; Transconductance;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1964.3439
Filename :
1445369
Link To Document :
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