Analysis and design of a low-voltage RF CMOS mixer

Author

Liu, Lu ; Wang, ZhiHua

Author_Institution

Electr. Eng. Dept., Tsinghua Univ., Beijing, China

Volume

53

Issue

3

fYear

2006

fDate

3/1/2006 12:00:00 AM

Firstpage

212

Lastpage

216

Abstract

A CMOS low-voltage downconversion mixer is presented. With 1.69-GHz local oscillator signal input and 1.63-GHz RF signal input, measurement results show that the conversion gain is 6.631 dB, input-referred third-order intercept point is 1.51 dBm, single-sideband noise figure is 21.43 dB with a 1.8-V supply voltage. The mixer´s noise and linearity analysis, layout technique to maximize RF performance and minimize noise performance are also presented in this paper.

Keywords

CMOS analogue integrated circuits; circuit theory; integrated circuit noise; low-power electronics; mixers (circuits); radiofrequency integrated circuits; 1.63 GHz; 1.69 GHz; 1.8 V; 21.43 dB; 6.631 dB; CMOS analog integrated circuits; CMOS low-voltage downconversion mixer; linearity analysis; low-voltage RF CMOS mixer; low-voltage circuit; mixers; noise analysis; Capacitors; Integrated circuit noise; Linearity; Local oscillators; Low voltage; MOSFETs; Performance analysis; RF signals; Radio frequency; Voltage-controlled oscillators; CMOS analog integrated circuits; low-voltage circuit; mixers; noise and linearity analysis;

fLanguage

English

Journal_Title

Circuits and Systems II: Express Briefs, IEEE Transactions on

Publisher

ieee

ISSN

1549-7747

Type

jour

DOI

10.1109/TCSII.2005.857762

Filename

1605436