• DocumentCode
    866560
  • Title

    Summary of the Fourth International Conference on Ion Implantation: Equipment and Techniques

  • Author

    Glawischnig, H. ; Ryssel, H. ; McKenna, C.

  • Author_Institution
    Siemens AG, Munich, Germany
  • Volume
    30
  • Issue
    2
  • fYear
    1983
  • fDate
    4/1/1983 12:00:00 AM
  • Firstpage
    1693
  • Lastpage
    1696
  • Abstract
    On September 13-17, 1982, the Fourth International Conference on Ion Implantation: Equipment and Techniques, was held in Berchtesgaden, Germany. Seventy-seven invited and contributed papers in the fields of ion-implantation equipment (ion sources, high-current implanters for metals and semiconductors, beam scanners, wafer cooling, wafer transport, etc.), equipment testing (dosimetry, voltage calibration, etc.), special measuring techniques for implanted layers, as well as applications of ion implantation to semiconductors and metals, were presented. In addition, a school on problems concerning the use of ion implantation was held. This paper summarizes the various presentations.
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1983.4332617
  • Filename
    4332617