DocumentCode
866560
Title
Summary of the Fourth International Conference on Ion Implantation: Equipment and Techniques
Author
Glawischnig, H. ; Ryssel, H. ; McKenna, C.
Author_Institution
Siemens AG, Munich, Germany
Volume
30
Issue
2
fYear
1983
fDate
4/1/1983 12:00:00 AM
Firstpage
1693
Lastpage
1696
Abstract
On September 13-17, 1982, the Fourth International Conference on Ion Implantation: Equipment and Techniques, was held in Berchtesgaden, Germany. Seventy-seven invited and contributed papers in the fields of ion-implantation equipment (ion sources, high-current implanters for metals and semiconductors, beam scanners, wafer cooling, wafer transport, etc.), equipment testing (dosimetry, voltage calibration, etc.), special measuring techniques for implanted layers, as well as applications of ion implantation to semiconductors and metals, were presented. In addition, a school on problems concerning the use of ion implantation was held. This paper summarizes the various presentations.
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1983.4332617
Filename
4332617
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