Damage Analysis and Atom Site Determination in Ion-Implanted GaAs Using Low Energy Proton Channeling and PIXE

The use of proton channeling and proton induced X-ray excitation (PIXE) for damage analysis and lattice location measurements is reviewed with emphasis given to those aspects of the measurements that relate backscattering to X-ray excitation. Angular scan curves from backscattering spectra are compared to those of PIXE spectra and discussed in terms of exact versus nonexact substitutionality. Details concerning the energy dependence of X-ray production, matrix absorption, and depth dependent cross sections are presented and their significance to damage measurements assessed. Examples are given of damage analysis and substitutionality measurements for sulfur implanted in GaAs. The use of PIXE for measuring relative displacement rates for Ga and As in ion irradiated GaAs are also discussed.