Title :
Ion Implantation into GaAs for Microwave Device Applications
Author_Institution :
Semiconductor Research and Development Laboratory Motorola Semiconductor Product Sector Phoenix, Arizona 85008
fDate :
4/1/1983 12:00:00 AM
Keywords :
Annealing; Conductivity; Gallium arsenide; Implants; Impurities; Ion implantation; Microwave devices; Oxygen; Semiconductor materials; Substrates;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1983.4332622
