DocumentCode :
86664
Title :
A High Voltage Swing Dual-Band Bandpass 
Modulator for Mobile Base-Station
Author :
Bonghyuk Park ; Seunghyun Jang ; Ostrovskyy, P. ; Jaeho Jung
Author_Institution :
Mobile RF Res. Team, Electron. & Telecommun. Res. Inst. (ETRI), Daejeon, South Korea
Volume :
23
Issue :
4
fYear :
2013
fDate :
Apr-13
Firstpage :
199
Lastpage :
201
Abstract :
A fully integrated high voltage swing dual-band continuous-time bandpass delta-sigma modulator (CT BPDSM) with a high voltage swing and fabricated on a 0.25 μm SiGe BiCMOS is presented. The proposed CT BPDSM consists of a two-stage second-order resonator, a high speed comparator, multi-feedback current DACs, and a high voltage swing driver. The band selection is controlled using a capacitor bank, and fine frequency tuning is conducted by a varactor. At 883 and 955 MHz, the implemented BPDSM with a high voltage swing shows a peak SNR of 40.6 and 41.9 dB, and an error vector magnitude (EVM) of 5.48%, 3.48%, respectively. In addition, it has a differential output voltage swing of 1.55 Vp-p with a dc power consumption of 635.3 mW.
Keywords :
Ge-Si alloys; delta-sigma modulation; mobile communication; varactors; BiCMOS; CT BPDSM; EVM; SiGe; band selection; capacitor bank; dual-band bandpass ΔΣ modulator; error vector magnitude; frequency 883 MHz; frequency 955 MHz; frequency tuning; fully integrated continuous-time bandpass delta-sigma modulator; high speed comparator; high voltage swing driver; mobile base-station; multifeedback current DAC; power 635.3 mW; size 0.25 mum; two-stage second-order resonator; varactor; voltage 1.55 V; Clocks; Delay; Dual band; Modulation; Q-factor; Voltage measurement; Bandpass delta-sigma modulator (BPDSM); Class-S; base-station; dual-band; high voltage driver;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2013.2247992
Filename :
6476753
Link To Document :
