Title :
VLSI Materials: A Comparison between Buried Oxide SOI and SOS
Author :
Hamdi, A.H. ; McDaniel, F.D. ; Pinizzotto, R.F. ; Matteson, S. ; Lam, H.W. ; Malhi, S.D.S.
Author_Institution :
Department of Physics North Texas State University Denton, TX 76203
fDate :
4/1/1983 12:00:00 AM
Abstract :
High dose oxygen ion implantation in Si has been used to form a 0.48 ¿m thick buried oxide layer. The total dose was 2.1 × 1018 0+/cm2 implanted at 150 keV/atom. Epitaxial growth was employed to deposit a 0.38 ¿m thick layer on top of the implanted wafers. High quality single crystal Si on the entire 76 mm diameter wafer was acheived. The microstructure of the buried oxide SOI is compared to SOS material.
Keywords :
Annealing; Atomic layer deposition; Circuits; Crystal microstructure; Crystalline materials; Instruments; Ion implantation; Laboratories; Silicon; Very large scale integration;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1983.4332624
