• DocumentCode
    866640
  • Title

    VLSI Materials: A Comparison between Buried Oxide SOI and SOS

  • Author

    Hamdi, A.H. ; McDaniel, F.D. ; Pinizzotto, R.F. ; Matteson, S. ; Lam, H.W. ; Malhi, S.D.S.

  • Author_Institution
    Department of Physics North Texas State University Denton, TX 76203
  • Volume
    30
  • Issue
    2
  • fYear
    1983
  • fDate
    4/1/1983 12:00:00 AM
  • Firstpage
    1722
  • Lastpage
    1725
  • Abstract
    High dose oxygen ion implantation in Si has been used to form a 0.48 ¿m thick buried oxide layer. The total dose was 2.1 × 1018 0+/cm2 implanted at 150 keV/atom. Epitaxial growth was employed to deposit a 0.38 ¿m thick layer on top of the implanted wafers. High quality single crystal Si on the entire 76 mm diameter wafer was acheived. The microstructure of the buried oxide SOI is compared to SOS material.
  • Keywords
    Annealing; Atomic layer deposition; Circuits; Crystal microstructure; Crystalline materials; Instruments; Ion implantation; Laboratories; Silicon; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1983.4332624
  • Filename
    4332624
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=866640