DocumentCode

866660

Title

Effects of Low Temperature Annealing of B+ + Si+ OR BF2+ + Si+ Implanted Silicon

Author

Wilson, S.R. ; Gregory, R.B. ; Paulson, W.M. ; Hamdi, A.H. ; McDaniel, F.D.

Author_Institution

Semiconductor Research and Development Laboratories Motorola Semiconductor Products Sector 5005 E. McDowell Road, Phoenix, AZ 85008

Volume

30

Issue

2

fYear

1983

fDate

4/1/1983 12:00:00 AM

Firstpage

1730

Lastpage

1733

Keywords

Amorphous materials; Annealing; Boron; Epitaxial growth; Implants; Impurities; Lattices; Silicon; Solids; Temperature distribution;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.1983.4332626

Filename

4332626