Title :
Characterization of Ion Implanted Silicon Annealed with a Graphite Radiation Source
Author :
Wilson, S.R. ; Gregory, R.B. ; Paulson, W.M. ; Diehl, H.T. ; Hamdi, A.H. ; McDaniel, F.D.
Author_Institution :
Semiconductor Research and Development Laboratory Motorola, Inc. 5005 E. McDowell Road, Phoenix, AZ 85008
fDate :
4/1/1983 12:00:00 AM
Keywords :
Annealing; Boron; Electron beams; Impurities; Infrared heating; Ion implantation; Isothermal processes; Silicon; Surface emitting lasers; Temperature;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1983.4332627
