• DocumentCode
    866677
  • Title

    As Migration during PtSi Formation

  • Author

    Hamdi, A.H. ; McDaniel, F.D. ; Wilson, S.R.

  • Author_Institution
    Department of Physics North Texas State University Denton, TX 76203
  • Volume
    30
  • Issue
    2
  • fYear
    1983
  • fDate
    4/1/1983 12:00:00 AM
  • Firstpage
    1738
  • Lastpage
    1740
  • Abstract
    The migration of implanted As durinq PtSi formation on (100) Si wafers has been studied by Rutherford backscattering techniques. Two thicknesses of PtSi layer (50 and 200 nm) have been choosen for this study. The PtSi formation temperatures were either 525°C or 625°C. The data show that the number of the migrating As atoms is independent of the PtSi thickness or formation temperatures used in this investigation.
  • Keywords
    Annealing; Atmosphere; Atomic layer deposition; Backscatter; Etching; Magnetic analysis; Physics; Silicides; Silicon; Temperature;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1983.4332628
  • Filename
    4332628
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=866677