Title :
InGaN Light-Emitting Diode With Quasi-Quantum-Dot-Shaped Active Layer Using SiCN Interfacial Layer
Author :
Park, Eun-Hyun ; Jeon, Soo-Kun ; Kim, Chang-Tae ; Kim, Dong-Hwan ; Park, Joong-Seo ; Ferguson, Ian T. ; Yoo, Tae-Kyung
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
Abstract :
A quasi-quantum-dot (QQD)-shaped InGaN-GaN multilple-quantum-well light-emitting diode (LED) was achieved using a silicon carbon nitride (SiCN) interfacial layer. QQDs with ~100-nm diameter and ~4-nm height were uniformly formed inside the InGaN active layer due to strain and affinity difference between the InGaN and SiCN layer. The surface morphology and structural properties of QQD-LED were measured with atomic force microscopy, secondary ion mass spectrometry, and X-ray diffraction. Device performance of QQD-LEDs were evaluated and compared with normal LEDs. The QQD-LED showed ~15% higher photoluminescence intensity and ~10% higher optical output power
Keywords :
III-V semiconductors; X-ray diffraction; atomic force microscopy; gallium compounds; indium compounds; interface structure; light emitting diodes; photoluminescence; quantum well devices; secondary ion mass spectra; semiconductor quantum dots; silicon compounds; surface morphology; 100 nm; 4 nm; InGaN; InGaN light-emitting diode; SiCN; SiCN interfacial layer; X-ray diffraction; atomic force microscopy; multiple-quantum-well LED; optical output power; photoluminescence intensity; quasiquantum-dot-shaped active layer; secondary ion mass spectrometry; silicon carbon nitride interfacial layer; surface morphology; Atomic force microscopy; Atomic layer deposition; Atomic measurements; Capacitive sensors; Force measurement; Light emitting diodes; Mass spectroscopy; Silicon; Surface morphology; X-ray diffraction; Light-emitting diodes (LEDs); quantum-well devices; semiconductor epitaxial layers; semiconductor growth;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.889000
