C.W. X and K band radiation from GaAs epitaxial layers

It has been shown previously that fields of 3000 V/cm applied to GaAs sam generate microwave oscillations. This letter describes experiments with epitaxial GaAs layers 13 ¿m thick. These have been operated c.w., with applied voltages less than 9V, and have generated fundamental frequencies near 12 Gc/s, with additional frequencies near 15, 19 and 23 Gc/s.