Title :
Friction modeling in linear chemical-mechanical planarization
Author_Institution :
Dept. of Mech. & Aerosp. Eng., Rutgers Univ., Piscataway, NJ
fDate :
10/1/2008 12:00:00 AM
Abstract :
In this article, we develop an analytical model of the relationship between the wafer/pad friction and process configuration. We also provide experimental validation of this model for in situ process monitoring. CMP thus demonstrates that the knowledge and methodologies developed for friction modeling and control can be used to advance the understanding, monitoring, and control of semiconductor manufacturing processes. Meanwhile, relevant issues and challenges in real-time monitoring of CMP are presented as sources of future development.
Keywords :
chemical mechanical polishing; friction; integrated circuit manufacture; planarisation; polishing; CMP; analytical model; control; friction modeling; linear chemical-mechanical planarization; semiconductor manufacturing; wafer-pad friction; Chemical processes; Friction; Integrated circuit modeling; Lithography; Mathematical model; Planarization; Semiconductor device manufacture; Semiconductor device modeling; Slurries; Surface topography;
Journal_Title :
Control Systems, IEEE
DOI :
10.1109/MCS.2008.927333