DocumentCode :
866975
Title :
The metal–gate transistor
Author :
Lindmayer, J.
Volume :
52
Issue :
12
fYear :
1964
Firstpage :
1751
Lastpage :
1751
Keywords :
Bridge circuits; Conductors; Crystallization; Electron emission; Epitaxial growth; Laboratories; Semiconductivity; Semiconductor device doping; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1964.3497
Filename :
1445427
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=866975
