Title :
Thermal drift of m.o.s. devices
Author :
Giralt, G. ; Andre, B. ; Simonne, J. ; Esteve, Daniel
Author_Institution :
Université de Toulouse, Faculté des Sciences, Laboratoire de Génie Electrique, Toulouse, France
fDate :
9/1/1965 12:00:00 AM
Abstract :
Experimental results concerning the temperature dependence of an m.o.s. field-effect transistor are presented. These results show a striking linear dependence of the temperature coefficient on the gate voltage. Comparison between experiment and simplified theory gives rise to many problems of validity of the theory.
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19650171
