DocumentCode
86720
Title
Short Q-Ary Fixed-Rate WOM Codes for Guaranteed Rewrites and With Hot/Cold Write Differentiation
Author
Cassuto, Yuval ; Yaakobi, Eitan
Author_Institution
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
Volume
60
Issue
7
fYear
2014
fDate
Jul-14
Firstpage
3942
Lastpage
3958
Abstract
To the body of works on rewrite codes for constrained memories, we add a comprehensive study in a direction that is especially relevant to practical storage. The subject of this paper is codes for the q-ary extension of the write-once memories model, with input sizes that are fixed throughout the write sequence. Seven code constructions are given with guarantees on the number of writes they can support. For the parameters addressed by the constructions, we also prove upper bounds on the number of writes, which prove the optimality of three of the constructions. We concentrate on codes with short block lengths to keep the complexity of decoding and updates within the feasibility of practical implementation. Even with these short blocks the constructed codes are shown to be within a small additive constant from capacity for an arbitrarily large number of input bits. Part of the study addresses a new rewrite model where some of the input bits can be updated multiple times in a write sequence (hot bits), while other are updated at most once (cold bits). We refer to this new model as hot/cold rewrite codes. It is shown that adding cold bits to a rewrite code has a negligible effect on the total number of writes, while adding an important feature of leveling the physical wear of memory cells between hot and cold input data.
Keywords
block codes; decoding; differentiation; constrained memory cell; decoding complexity; hot-cold rewrite code; hot-cold write differentiation; short Q-ary fixed-rate WOM code; short block lengths code; write sequence; write-once memory model; Ash; Decoding; Lattices; Media; Shape; Upper bound; Vectors; Re-write codes; WOM codes; flash storage; hot/cold; lattice tiling; multi-level memories;
fLanguage
English
Journal_Title
Information Theory, IEEE Transactions on
Publisher
ieee
ISSN
0018-9448
Type
jour
DOI
10.1109/TIT.2014.2318722
Filename
6802423
Link To Document