Title :
An Experimental Perspective of Trap Generation Under BTI Stress
Author :
Mukhopadhyay, Subhadeep ; Mahapatra, Souvik
Author_Institution :
Dept. of Electr. Eng., IIT Bombay, Mumbai, India
Abstract :
A gated-diode or direct current IV method is used to characterize trap generation (TG) under negative-bias temperature instability (NBTI) and positive-bias temperature instability (PBTI) stress in different planar high-k metal gate p-channel and n-channel MOSFETs, respectively. After correction of the measurement delay, very similar time (tSTR), voltage (VG,STR), temperature (T), AC pulse duty cycle, and frequency ( f ) dependence of TG is seen for NBTI and PBTI. Measured TG shows power-law time dependence with a time exponent of n ~ 0.16 for NBTI and PBTI and for DC and AC stress. Uncoupled nature of voltage acceleration (Γ) and T activation (EA) is seen. Interlayer scaling has a similar impact on EA and Γ for NBTI and PBTI. However, the physical location of TG is shown to be different for NBTI and PBTI stress.
Keywords :
MOSFET; electron traps; hole traps; negative bias temperature instability; semiconductor device reliability; AC stress; BTI stress; DC stress; NBTI; PBTI; direct current IV method; gated diode; negative bias temperature instability; planar high-K metal gate MOSFET; positive bias temperature instability; trap generation; voltage acceleration; Delays; High K dielectric materials; Logic gates; Stress; Stress measurement; Temperature measurement; Direct current IV (DCIV); high- $k$ metal gate (HKMG); high-k metal gate (HKMG); interlayer (IL) scaling; negative-bias temperature instability (NBTI); positive-bias temperature instability (PBTI); trap generation (TG); trap generation (TG).;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2434955
