DocumentCode :
867646
Title :
Spatial mode matching efficiencies for heterodyned GaAlAs semiconductor lasers
Author :
Winick, K.A. ; Kumar, P.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
Volume :
6
Issue :
4
fYear :
1988
fDate :
4/1/1988 12:00:00 AM
Firstpage :
513
Lastpage :
520
Abstract :
High spatial mode matching efficiencies are experimentally demonstrated when open-loop frequency-stabilized GaAlAs semiconductor lasers are heterodyned on silicon p-i-n detectors. Repeatable values of 75% are obtained using two independent lasers. The mode-matching efficiency increases to 90% when a single modulated laser is self-heterodyned using an unequal-path-length Mach-Zehnder interferometer. Experimental data are shown to match closely with theoretical predictions
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; integrated optics; semiconductor junction lasers; GaAlAs semiconductor lasers; Si detectors; mode-matching efficiency; p-i-n detectors; self-heterodyned; single modulated laser; spatial mode matching efficiencies; unequal-path-length Mach-Zehnder interferometer; Detectors; Laser beams; Laser modes; Laser theory; Local oscillators; Optical interferometry; Optical mixing; PIN photodiodes; Semiconductor lasers; Silicon;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/50.4033
Filename :
4033
Link To Document :
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