Monolithic IMPATT oscillator characterization

Author

Wang, Nan-Lei ; Cobb, Michael

Author_Institution

Raytheon, Lexington, MA, USA

Volume

37

Issue

2

fYear

1989

fDate

2/1/1989 12:00:00 AM

Firstpage

393

Lastpage

399

Abstract

Two methods were developed to characterize the monolithic IMPATT resonator used in the design of the millimeter-wave oscillators. Although they are only good for discrete frequency points, the accuracy is much better than the method of de-embedding. The transmission resonance method can also be applied to other circuitry with high reflection coefficients, such as the matching circuit of a narrowband power FET, or HBT. The varactor method is very handy for in situ measurements. The drawback is that it is destructive and the accuracy deteriorates when the loss is high (a small arc). The experimental results are valuable for monolithic IMPATT oscillator design

Keywords

IMPATT diodes; MMIC; microwave oscillators; discrete frequency points; matching circuit; millimeter-wave oscillators; monolithic IMPATT oscillator; monolithic IMPATT resonator; narrowband power FET; reflection coefficients; transmission resonance method; varactor method; FETs; Frequency; Heterojunction bipolar transistors; Millimeter wave circuits; Millimeter wave technology; Narrowband; Oscillators; RLC circuits; Reflection; Resonance;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.20066

Filename

20066