Title :
A quasi-planar FET amplifier in integrated finline and microstrip technique
Author :
Ruxton, James ; Hoefer, Wolfgang J R
Author_Institution :
Millennium Microwave Corp., Ottawa, Ont., Canada
fDate :
2/1/1989 12:00:00 AM
Abstract :
The design and performance of a single-stage 20-GHz GaAs FET amplifier in a quasi-planar technology are described. The component includes a compact, wideband transition between the finline input and output ports and the microstrip impedance-matching networks for the transistor. By virtue of a novel bias network which includes a microstrip bandstop filter and a 50-Ω resistor, this transition provides unconditional stability even at frequencies below cutoff of the finline ports. The overall amplifier has a gain of 6 dB at 20 GHz, and a 3-dB bandwidth of 17%
Keywords :
III-V semiconductors; fin lines; microwave amplifiers; microwave integrated circuits; strip lines; 20 GHz; 6 dB; GaAs; bias network; cutoff; finline input; integrated finline; microstrip bandstop filter; microstrip impedance-matching networks; microstrip technique; output ports; quasi-planar FET amplifier; unconditional stability; wideband transition; Broadband amplifiers; FETs; Finline; Gallium arsenide; Impedance; Microstrip components; Microstrip filters; Resistors; Stability; Wideband;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
